5SHY3545L0016 ABB 可控硅工業(yè)模塊是支撐能源領(lǐng)域發(fā)展的核心部件。為實(shí)現(xiàn)3060雙碳目標(biāo)，我國(guó)正在超常規(guī)推動(dòng)新能源發(fā)電、大容量輸配電和電氣化交通等領(lǐng)域，對(duì)電壓等級(jí)4.5KV以上的功率器件需求急速增長(zhǎng)。提高器件電壓和容量可以減少器件串并聯(lián)數(shù)量、縮減裝備體積和成本，是解決城市用地緊張、降低海上風(fēng)電平臺(tái)建設(shè)成本的關(guān)鍵。然而，受工作機(jī)理和制備工藝限制，IGBT器件最大功率等級(jí)為4.5kV/3KA和6.5kV/0.75kA，已接近瓶頸，無(wú)法滿足能源發(fā)展需求。因此，需更高電壓、更大容量、更高可靠性和更低制造成本的功率半導(dǎo)體器件解決方案。
2020年，中國(guó)功率半導(dǎo)體市場(chǎng)規(guī)模達(dá)2000億元，但90%以上依賴進(jìn)口，尤其是4.5kV以上器件，近乎全部進(jìn)口。亞需尋求自主可控的功率半導(dǎo)體器件國(guó)產(chǎn)替代方案。

5SHY3545L0016

5SHY3545L0016 ABB 可控硅工業(yè)模塊解決方案
本技術(shù)面向新能源發(fā)電和輸配電領(lǐng)域大容量、高可靠的需求，提出了自主化IGCT器件(集成門(mén)極換流晶閘管)的設(shè)計(jì)、制備和驅(qū)動(dòng)控制方案，可以提高陽(yáng)斷電壓和關(guān)斷電流能力、降低器件運(yùn)行損耗，目可以結(jié)合應(yīng)用工況開(kāi)展定制優(yōu)化，如改善器件防爆特性、解決高壓裝置中的驅(qū)動(dòng)供電問(wèn)題等，從而實(shí)現(xiàn)大容量、高可靠、低成本、高效率的能量管理和功率變換目前團(tuán)隊(duì)已研制出4.5kV/5kA和6.5KV/4kA的IGCT器件，功率等級(jí)全面覆蓋1GBT，且具有向更大容量發(fā)展的潛力。與IGBT.MOSFET等晶體管器件相比，本技術(shù)提出的IGCT具有通態(tài)損耗低、耐受電壓高、可靠性高、抗干擾能力強(qiáng)等突出優(yōu)勢(shì)，符合能源發(fā)展趨勢(shì)，且制造工藝沿用基本沿用傳統(tǒng)的晶閘管路線，制造成本低，國(guó)內(nèi)工藝基礎(chǔ)好。

5SHY3545L0016

5SHY3545L0016 ABB thyristor industrial modules are the core components supporting the development of the energy sector. In order to achieve the goal of 3060 double carbon, China is exceptionally promoting new energy generation, large-capacity transmission and distribution and electrified transportation, and the demand for power devices with voltage levels above 4.5KV has grown rapidly. Improving device voltage and capacity can reduce the number of devices in series and parallel, reduce equipment volume and cost, which is the key to solve the shortage of urban land and reduce the cost of offshore wind power platform construction. However, limited by the working mechanism and preparation process, the maximum power level of IGBT devices is 4.5kV/3KA and 6.5kV/0.75kA, which is close to the bottleneck and cannot meet the needs of energy development. Therefore, higher voltage, larger capacity, higher reliability and lower manufacturing cost power semiconductor device solutions are required.
In 2020, China’s power semiconductor market will reach 200 billion yuan, but more than 90% rely on imports, especially devices above 4.5kV, almost all imports. Asia needs to seek domestic alternatives to autonomous and controllable power semiconductor devices.
5SHY3545L0016 ABB thyristor industrial module solution
To meet the demand of large capacity and high reliability in the field of new energy power generation and transmission and distribution, the technology proposes the design, preparation and drive control scheme of autonomous IGCT device (integrated gate commutator thyristor), which can improve the positive off voltage and off current capability and reduce the operating loss of the device, and can be customized and optimized according to the application conditions. Such as improving the explosion-proof characteristics of the device, solving the problem of driving power supply in high voltage devices, etc., so as to achieve large capacity, high reliability, low cost, high efficiency energy management and power conversion. At present, the team has developed 4.5kV/5kA and 6.5KV/4kA IGCT devices, the power level fully covers 1GBT, and has the potential for greater capacity development. Compared with IGBT.MOSFET and other transistor devices, the IGCT proposed by the technology has the advantages of low on-state loss, high withstand voltage, high reliability, strong anti-interference ability, in line with the energy development trend, and the manufacturing process follows the traditional thyristor route, low manufacturing cost, and the domestic process foundation is good.

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